Hitoshi NAKAHARA

Publication List

• Y. Suzuki, K. Asaka, H. Nakahara and Y. Saito, “Electric and Mass Transport of a Suspended Multiwall Carbon Nanotube Studied by In situ Transmission Electron Microscopy”, Jpn. J. Appl. Phys. 49, 02BD07 (2010).
• H. Nakahara, T. Yamashita and Y. Saito, “Field Emission Studies on Methane- and Ethane-Adsorbed Carbon Nanotubes”, e-J. Surf. Sci. Nanotech. 8, 1 (2010).
• M. Karita, K. Asaka, H. Nakahara and Y. Saito, “In-situ Transmission Electron Microscopy of Structural Change of the Contact between a Carbon Nanotube and Gold by Local Joule Heating”, in: “International Symposium on Micro-NanoMechatronics and Human Science 2010”, (IEEE, Nagoya, 2010) p. 447 .
• H. Nakahara, Y. Kusano, T. Kono and Y. Saito, “Evaluations of Carbon Nanotube Field Emitters for Electron Microscopy”, Appl. Surf. Sci. 256, 1214 (2009).
• H. Liu, H. Nakahara, S. Uemura and Y. Saito, “Ionization Vacuum Gauge with a Carbon Nanotube Field Electron Emitter Combined with a Shield Electrode”, Vacuum 84, 713 (2009).
• M. Mino, H. Suzuki, H. Nakahara and Y. Saito, “Al-Induced One Dimensional Nano-Facet Formation on Si(113) Surface”, e-J. Surf. Sci. Nanotech. 6, 45 (2008).
• T. Minami, Y. Yamagata, H. Nakahara and A. Ichimiya, “Structural Analysis of Crystal Surfaces by Reflection High-Energy Electron Diffraction Patterns: The Si(111)7×7 Surface”, e-J. Surf. Sci. Nanotech. 6, 87 (2008).
• K. Asaka, H. Nakahara and Y. Saito, “Nanowelding of a Multiwalled Carbon Nanotube to Metal Surface and its Electron Field Emission Properties”, Appl. Phys. Lett. 92, 023114 (2008).
• R. Suryana, A. Ichimiya, H. Nakahara and Y. Saito, “Surface Morphology of the Si(111) Surface Induced by Co-Deposition of Si and CH₄”, J. Cryst. Growth 301-302 (2007) 349-352.
• M. Mino, H. Suzuki, H. Nakahara and Y. Saito, “Al-Induced One Dimensional Nano-Facet Formation on Si(113) Surface”, e-J. Surf. Sci. Nanotech. submitted (2007).
• R. Suryana, A. Ichimiya, K. Akimoto, H. Nakahara and Y. Saito, “Carbonization of Si(111)-7×7 Surface Using CH₄ with Hot Tungsten Filament”, Japan. J. Appl. Phys. 45 (2006) 6250-6252.
• H. Sato, Y. Hori, K. Hata, K. Seko, H. Nakahara and Y. Saito, “Effect of Catalyst Oxidation on the Growth of Carbon Nanotubes by Thermal Chemical Vapor Deposition”, J. Appl. Phys. 100 (2006) 104320.
• H. Nakahara, T. Oya, Y. Saito and A. Ichimiya, “RHEED Rocking Curve Analysis of Si(111) √3×√3-Ag Surface Phase Transition at Low Temperature”, e-J. Surf. Sci. Nanotech. 4 (2006) 414–418.
• H. Nakahara, H. Suzuki and A. Ichimiya, “Self-Organized Nanostructure Formation on High-Index Si Surfaces Induces by Ga”, Trans. Mat. Res. Soc. Jpn. 29 (2004) 435–438.
• H. Nakahara, T. Suzuki and A. Ichimiya, “Ag/Si(111)√3×√3 Surface Phase Transition at Low Temperature Studied by RHEED”, Appl. Surf. Sci. 234 (2004) 292–296.
• H. Nakahara, H. Suzuki, S. Miyata and A. Ichimiya, “Ga Induced Nano Facet Formation on Si (11n) Surfaces”, Appl. Surf. Sci. 212-213 (2003) 157–161.
• H. Nakahara, T. Hishida and A. Ichimiya, “Inelastic Electron Analysis in Reflection High-Energy Electron Diffraction Condition”, Appl. Surf. Sci. 212-213 (2003) 334–338.
• H. Suzuki, H. Nakahara, S. Miyata and A. Ichimiya, “Surface Morphology of Ga Adsorbed Si(113) Surface”, Surf. Sci. 493 (2001) 166–172.
• H. Nakahara, M. Ichikawa and A. Ichimiya, “Nucleation and Growth Processes on Molecular Beam Epitaxial Growth”, Defect and Diffusion Forum 160–161 (1998) 65–74.
• S. Maruno, H. Nakahara, S. Fujita, H. Watanabe, Y. Kusumi and M. Ichikawa, “A Combined Apparatus of Scanning Reflection Electron Microscope and Scanning Tunneling Microscope”, Rev. Sci. Instr. 68 (1997) 116–119.
• A. Ichimiya, H. Nakahara and Y. Tanaka, in: “Advances in the Understanding of Crystal Growth Mechanisms”, Ed. by T. Nishinaga, K. Nishioka, J. Harada, A. Sasaki and H. Takei, (Elsevier Science B.V., North-Holland, 1997).
• T. Doi, H. Nakahara, M. Ichikawa and S. Hosoki, “Observation of Si(111) Surface Steps from Scanning Microscope Images of the Sample Absorption Current”, Surf. Sci. 376 (1997) 87–91.
• M. Miyao, K. Nakagawa, H. Nakahara, Y. Kiyota and M. Kondo, “Recent Progress of Heterostructure Technologies for Novel Silicon Devices”, Appl. Surf. Sci. 102 (1996) 360–371.
• A. Ichimiya, H. Nakahara and Y. Tanaka, “Structural Study of Epitaxial Growth on Si”, Thin Solid Films 281–282 (1996) 1–4.
• H. Nakahara, M. Ichikawa and S. Stoyanov, “Surface Diffusion and 2-Dimensional Nucleation Around Atomic Steps During Molecular Beam Epitaxial Growth”, Surf. Sci. 329 (1995) 115–120.
• S. Stoyanov, H. Nakahara and M. Ichikawa, “Dynamics of Step Bunching Induced by DC Resistive Heating of Si Wafer”, Japan. J. Appl. Phys. 33 (1994) 254–259.
• H. Nakahara and M. Ichikawa, “Migration of Ga Atoms During Si Molecular Beam Epitaxial Growth on a Ga-Adsorbed Si(111) Surface”, Surf. Sci. 298 (1993) 440–449.
• H. Nakahara, M. Ichikawa and S. Stoyanov, “Microprobe RHEED and SREM Studies of Si MBE on Ga-Adsorbed Si(111) Surface”, Ultramicrosc. 48 (1993) 417–424.
• A. Ichimiya, H. Nakahara, T. Hashizume and T. Sakurai, “Structural Analysis of Si(111) Surfaces During Homoepitaxial Growth”, Surf. Sci. 298 (1993) 284–292.
• A. Ichimiya, S. Kohmoto, H. Nakahara and Y. Horio, “Theory of RHEED and Application to Surface Structure Studies”, Ultramicrosc. 48 (1993) 425–432.
• H. Nakahara and M. Ichikawa, “Molecular Beam Epitaxial Growth of Si on Ga-Activated Si(111) Surface”, Appl. Phys. Lett. 61 (1992) 1531–1533.
• H. Nakahara and A. Ichimiya, “Structural Study of Si Growth on a Si(111)7×7 Surface”, Surf. Sci. 241 (1991) 124–134.
• H. Nakahara and A. Ichimiya, “Metastable Structure of Si(111) Surface During Homoepitaxial Growth”, Surf. Sci. 242 (1991) 162–165.
• G. Lehmpfuhl, A. Ichimiya and H. Nakahara, “Interpretation of RHEED Oscillations During MBE Growth”, Surf. Sci. 245 (1991) L159–L162.
• H. Nakahara and A. Ichimiya, “Silicon Deposition on Si(111) Surfaces at Room Temperature and Effects of Annealing”, J. Cryst. Growth 99 (1990) 514–519.
• H. Nakahara and A. Ichimiya, “RHEED Intensity Rocking Curves from Si(111) Surface During MBE Growth”, J. Cryst. Growth 95 (1989) 472–475.

Publication in Japanese

• 中原 仁, Ed. by 本多 健一, in: “表面・界面工学体系”, (フジ・テクノシステム, 2005) Chap. 第11章 第1節 薄膜の成長様式、同 第2節 エピタキシャル成長 p. 427.
• 中原 仁, “RHEEDにおけるエネルギ損失分光とRHEED図形”, 表面科学 24 (2003) 159–165.