Recent Presentations in International Conferences/Symposiums

• A. Ruammaitree, H. Hu, H. Nakahara, K. Akimoto, S. Harada, K. Soda and Y. Saito, “Determination of Epitaxial Graphene Thickness by X-Ray Diffraction and Raman Spectroscopy”, 8th International Symposium on Atomic Level Characterizations for New Materials and Devices ’11 (ALC’11, 2011, Seoul).
• H. Nakahara, S. Ichikawa, T. Ochiai, Y. Kusano and Y. Saito, “Carbon Nanotube Electron Source for Field Emission Scanning Electron Microscopy”, 8th International Symposium on Atomic Level Characterizations for New Materials and Devices ’11 (ALC’11, 2011, Seoul).
• M. Karita, K. Asaka, H. Nakahara and Y. Saito, “In-situ TEM Study on the Improvement of Contact Resistance between a Carbon Nanotube and Metal Electrodes by Local Melting”, 8th International Symposium on Atomic Level Characterizations for New Materials and Devices ’11 (ALC’11, 2011, Seoul).
• H. Hu, A. Ruammaitree, H. Nakahara, K. Asaka and Y. Saito, “Growth of Large-Scale Domains of Epitaxial Graphene on C-Face SiC”, 8th International Symposium on Atomic Level Characterizations for New Materials and Devices ’11 (ALC’11, 2011, Seoul).
• M. Karita, K. Asaka, H. Nakahara and Y. Saito, “In-situ Transmission Electron Microscopy of Structural Change of the Contact between a Carbon Nanotube and Gold by Local Joule Heating”, 2010 International Symposium on Micro-NanoMechatronics and Human Science (MHS 2010, 2010, Nagoya).
• H. Nakahara, Y. Moriwaki and Y. Saito, “Ag Nano Clusters Formation by Gas Exposure onto Si(111)√3×√3-Ag Surface”, Symposium on Surface and Nano Science 2009 (SSNS’09, 2009, Shizukuishi).
• H. Nakahara, T. Yamashita and Y. Saito, “Field Emission Studies on Methane- and Ethane-Adsorbed Carbon Nanotubes”, 7th International Symposium on Atomic Level Characterizations for New Materials and Devices '09 (ALC’09, 2009, Maui).
• T. Yamashita, K. Asaka, H. Nakahara and Y. Saito, “Field Emission Microscopy of Methane Molecules Adsorbed on Multiwall Carbon Nanotube Field Emitters”, The 7th International Vacuum Electron Sources Conference (IVESC 2008, 2008, London).
• T. Yamashita, K. Asaka, H. Nakahara, S. Uemura and Y. Saito, “Field Emission Microscopy of Methane Molecules Adsorbed on Multiwalled Carbon Nanotube Field Emitters”, The 15th International Display Workshop (IDW’08, 2008, Niigata).
• H. Nakahara, Y. Kusano, T. Kono and Y. Saito, “Evaluations of Carbon Nanotube Field Emitters for Electron Microscopy”, The 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4, 2008, Matsue).
• H. Nakahara, M. Mino and Y. Saito, “Structural and Morphological Study on Si(113) Surface with Aluminum”, Symposium on Surface and Nano Science 2008 (SSNS’08, 2008, Appi).
• H. Nakahara, T. Tanabe and Y. Saito, “Experimental and Computational Studies on Electron Emission from Carbon Nanotubes”, The 7th International Vacuum Electron Sources Conference (IVESC 2008, 2008, London).
• H. Nakahara, Y. Kusano, T. Kono and Y. Saito, “Evaluations of Field Electron Emission from a Carbon Nanotube”, The 15th International Display Workshop (IDW’08, 2008, Niigata).
• H. Liu, H. Nakahara, S. Uemura and Y. Saito, “Ionization Vacuum Gauge with a Carbon Nanotube Cold Cathode”, The 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4, 2008, Matsue).
• F. Kimura, K. Asaka, H. Nakahara, F. Kokai and Y. Saito, “Electric and Mass Transport of a Copper Nano-Rod Encapsulated in a Carbon Nanotube Studied by In Situ Transmission Electron Microscopy”, The IUMRS International Conference in Asia 2008 (IUMRS-ICA2008, 2008, Nagoya).
• Y. Saito, T. Matsukawa, T. Yamashita, K. Asaka, H. Nakahara and S. Uemura, “Field Emission from Metal-Deposited CNTs: Emission Stability Improvement and Atomic Images of Metal Clusters”, The 14th International Display Workshops (IDW’07, 2007, Sapporo).
• Y. Saito, T. Matsukawa, T. Yamashita, K. Asaka and H. Nakahara, “Field Emission Image of Aluminum Clusters Deposited on Carbon Nanotubes”, 6th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC’07, 2007, Kanazawa).
• H. Nakahara, “Indium Induced Surface Reconstruction on Si(113) Surface”, Symposium on Surface and Nano Science 2007 (SSNS’07, 2007, Appi).
• H. Nakahara, A. Tanaka, A. Ichimiya and Y. Saito, “Indium Induced Surface Reconstruction on Si(113) Surface”, 6th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC’07, 2007, Kanazawa).
• M. Mino, H. Suzuki, H. Nakahara and Y. Saito, “Al-Induced One Dimensional Nano-Facet Formation on Si(113) Surface”, 6th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC’07, 2007, Kanazawa).
• H. Nakahara, “Metal Adsorption Effect on Field Emission from Carbon Nanotubes”, Symposium on Surface Physics 2006 (SSP’06, 2006, Shizukuishi).
• H. Nakahara, “RHEED Study on Phase Transition of Si(111)√3×√3-Ag Surface Structure”, Symposium on Surface Physics 2006 (SSP’06, 2006, Shizukuishi).
• H. Nakahara, T. Oya, Y. Saito and A. Ichimiya, “One-Beam RHEED Analysis of Ag/Si(111) HCT to IET Transition at Low Temperature”, Symposium on Surface Physics 2005 (SSP’05, 2005, Shizukuishi).
• H. Nakahara, T. Oya, Y. Saito and A. Ichimiya, “RHEED Rocking Curve Analysis of Si(111) √3×√3-Ag Surface Phase Transition at Low Temperature”, 5th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC’05, 2005, Hawaii).
• H. Nakahara, T. Suzuki and A. Ichimiya, “RHEED Study on Surface Structural Transition of Silver Adsorbed Si(111) Surface at Low Temperature”, Symposium on Surface Physics 2004 (SSP’04, 2004, Shizukuishi).
• H. Suzuki, H. Nakahara and A. Ichimiya, “A Process of Nano-Facet Formation on the Ga/Si(113)”, Symposium on Surface Physics 2003 (SSP’03, 2003, Shizukuishi).
• H. Suzuki, H. Nakahara and A. Ichimiya, “Growth Process of Nano-Facet on a Si(113) Surface Induced by Ga”, 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7, 2003, Nara).
• H. Nakahara, T. Hishida, N. Terasawa and A. Ichimiya, “Inelastic Electron Analysis Using an Energy-Filtered RHEED”, Symposium on Surface Physics 2003 (SSP’03, 2003, Shizukuishi).
• H. Nakahara, H. Suzuki and A. Ichimiya, “Self-Organized Nanostructure Formation on High-Index Si Surfaces Induced by Ga”, The 8th IUMRS International Conference on Advanced Materials (IUMRS-ICAM 2003, 2003, Yokohama).
• H. Nakahara, T. Suzuki and A. Ichimiya, “RHEED Rocking Curve Analysis on Ag/Si(111) Surface Phase Transition at Low Temperature”, The 9th International Conference on Formation of Semiconductor Interfaces (ICFSI-9, 2003, Madrid).
• H. Suzuki, H. Nakahara, S. Miyata and A. Ichimiya, “Surface Morphology of Ga Adsorbed Si(113) Surfaces”, Symposium on Surface Physics 2002 (SSP’02, 2002, Furano).
• H. Nakahara, T. Hishida and A. Ichimiya, “Inelastic Electrons in Reflection High Energy Electron Diffraction”, Symposium on Surface Physics 2002 (SSP’02, 2002, Furano).
• H. Nakahara, H. Suzuki and A. Ichimiya, “Initial Stage of Ga-Induced Nano Facet Formation on Si(113) Surfaces”, IMR Workshop, Dr.Rohrer’s JSPS Award Workshop (2002, Sendai).
• H. Nakahara, H. Suzuki and A. Ichimiya, “Ga Induced Nano Facet Formation on Si(11n) Surfaces”, IMR Workshop, Dr.Rohrer’s JSPS Award Workshop (2002, Sendai).
• H. Nakahara, T. Hishida and A. Ichimiya, “Plasmon Excitation Analysis under Reflection High-Energy Electron Diffraction Conditions”, Asia-Pacific Surface & Interface Analysis Conference ’02 (APSIAC’02, 2002, Tokyo).
• H. Nakahara, T. Hishida and A. Ichimiya, “Inelastic Electron Analysis in Reflection High-Energy Electron Diffraction Condition”, 11th International Conference on Solid Films and Surfaces (11-ICSFS, 2002, Marseille).
• H. Nakahara, H. Suzuki, S. Miyata and A. Ichimiya, “Ga Induced Nano Facet Formation on Si(11n) Surfaces”, 11th International Conference on Solid Films and Surfaces (11-ICSFS, 2002, Marseille).
• H. Nakahara, T. Hishida and A. Ichimiya, “Development of a High-Resolution Energy Resolved RHEED”, Symposium on Surface Science (3S01, 2001, Furano).
• H. Suzuki, H. Nakahara, S. Miyata and A. Ichimiya, “Surface Morphology of Ga-Adsorbed Si(113) Surface”, International Symposium on Surface Science 2000 (ISSI PDSC 2000, 2000, Nagoya).
• H. Nakahara, T. Hishida and A. Ichimiya, “Development of a Point Target Energy Resolved RHEED”, 4th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-4, 2000, Nagoya).
• H. Nakahara and A. Ichimiya, “Computational Study on Surface Diffusion and Nucleation Processes in Surfactant Epitaxial Growth”, MRS Fall Meeting (1998, Boston).
• H. Nakahara and A. Ichimiya, “Metastable Structure of Si(111) Surface during Homoepitaxial Growth”, Yamada Conference XXVI: Surface as a New Material (1990, Osaka).
• H. Nakahara and A. Ichimiya, “Silicon Deposition on Si(111) Surfaces at Room Temperature and Effects of Annealing”, 9th International Conference on Crystal Growth (ICCG-9, 1989, Sendai).
• H. Nakahara and A. Ichimiya, “RHEED Intensity Rocking Curves from Si(111) Surface During MBE Growth”, 5th International Conference on Molecular Beam Epitaxy (MBE-V, 1988, Sapporo).