International Conferences/Symposiums (before 2004)

• H. Nakahara, T. Suzuki and A. Ichimiya, “RHEED Study on Surface Structural Transition of Silver Adsorbed Si(111) Surface at Low Temperature”, Symposium on Surface Physics 2004 (SSP’04, 2004, Shizukuishi).
• H. Suzuki, H. Nakahara and A. Ichimiya, “A Process of Nano-Facet Formation on the Ga/Si(113)”, Symposium on Surface Physics 2003 (SSP’03, 2003, Shizukuishi).
• H. Suzuki, H. Nakahara and A. Ichimiya, “Growth Process of Nano-Facet on a Si(113) Surface Induced by Ga”, 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7, 2003, Nara).
• H. Nakahara, T. Hishida, N. Terasawa and A. Ichimiya, “Inelastic Electron Analysis Using an Energy-Filtered RHEED”, Symposium on Surface Physics 2003 (SSP’03, 2003, Shizukuishi).
• H. Nakahara, H. Suzuki and A. Ichimiya, “Self-Organized Nanostructure Formation on High-Index Si Surfaces Induced by Ga”, The 8th IUMRS International Conference on Advanced Materials (IUMRS-ICAM 2003, 2003, Yokohama).
• H. Nakahara, T. Suzuki and A. Ichimiya, “RHEED Rocking Curve Analysis on Ag/Si(111) Surface Phase Transition at Low Temperature”, The 9th International Conference on Formation of Semiconductor Interfaces (ICFSI-9, 2003, Madrid).
• H. Suzuki, H. Nakahara, S. Miyata and A. Ichimiya, “Surface Morphology of Ga Adsorbed Si(113) Surfaces”, Symposium on Surface Physics 2002 (SSP’02, 2002, Furano).
• H. Nakahara, T. Hishida and A. Ichimiya, “Inelastic Electrons in Reflection High Energy Electron Diffraction”, Symposium on Surface Physics 2002 (SSP’02, 2002, Furano).
• H. Nakahara, H. Suzuki and A. Ichimiya, “Initial Stage of Ga-Induced Nano Facet Formation on Si(113) Surfaces”, IMR Workshop, Dr.Rohrer’s JSPS Award Workshop (2002, Sendai).
• H. Nakahara, H. Suzuki and A. Ichimiya, “Ga Induced Nano Facet Formation on Si(11n) Surfaces”, IMR Workshop, Dr.Rohrer’s JSPS Award Workshop (2002, Sendai).
• H. Nakahara, T. Hishida and A. Ichimiya, “Plasmon Excitation Analysis under Reflection High-Energy Electron Diffraction Conditions”, Asia-Pacific Surface & Interface Analysis Conference ’02 (APSIAC’02, 2002, Tokyo).
• H. Nakahara, T. Hishida and A. Ichimiya, “Inelastic Electron Analysis in Reflection High-Energy Electron Diffraction Condition”, 11th International Conference on Solid Films and Surfaces (11-ICSFS, 2002, Marseille).
• H. Nakahara, H. Suzuki, S. Miyata and A. Ichimiya, “Ga Induced Nano Facet Formation on Si(11n) Surfaces”, 11th International Conference on Solid Films and Surfaces (11-ICSFS, 2002, Marseille).
• H. Nakahara, T. Hishida and A. Ichimiya, “Development of a High-Resolution Energy Resolved RHEED”, Symposium on Surface Science (3S01, 2001, Furano).
• H. Suzuki, H. Nakahara, S. Miyata and A. Ichimiya, “Surface Morphology of Ga-Adsorbed Si(113) Surface”, International Symposium on Surface Science 2000 (ISSI PDSC 2000, 2000, Nagoya).
• H. Nakahara, T. Hishida and A. Ichimiya, “Development of a Point Target Energy Resolved RHEED”, 4th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-4, 2000, Nagoya).
• H. Nakahara and A. Ichimiya, “Computational Study on Surface Diffusion and Nucleation Processes in Surfactant Epitaxial Growth”, MRS Fall Meeting (1998, Boston).
• H. Nakahara and A. Ichimiya, “Metastable Structure of Si(111) Surface during Homoepitaxial Growth”, Yamada Conference XXVI: Surface as a New Material (1990, Osaka).
• H. Nakahara and A. Ichimiya, “Silicon Deposition on Si(111) Surfaces at Room Temperature and Effects of Annealing”, 9th International Conference on Crystal Growth (ICCG-9, 1989, Sendai).
• H. Nakahara and A. Ichimiya, “RHEED Intensity Rocking Curves from Si(111) Surface During MBE Growth”, 5th International Conference on Molecular Beam Epitaxy (MBE-V, 1988, Sapporo).